p-GaN/Al0.35Ga0.65N/GaN quantum-well ultraviolet Schottky photodetector

被引:0
|
作者
State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China [1 ]
机构
来源
Pan Tao Ti Hsueh Pao | 2006年 / 10卷 / 1861-1865期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Optical spectroscopic study of electric field sharing effects in piezoelectric GaN/Al0.65Ga0.35N multi-quantum well structures
    Hogg, RA
    Norman, CE
    Shields, AJ
    Pepper, M
    Iizuka, N
    PHYSICA E, 2000, 7 (3-4): : 924 - 928
  • [22] Novel Ultraviolet (UV) Photodetector Based on In-Situ Grown n-GaN Nanowires Array/p-GaN Homojunction
    Wang, Chengmin
    Wang, Zhicheng
    Liu, Zhiqiang
    Wu, Shaoteng
    Wang, Liancheng
    Yi, Xiaoyan
    Wang, Junxi
    Li, Jinmin
    Wen, Kunhua
    Xiong, Deping
    He, Miao
    JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2019, 14 (07) : 911 - 915
  • [23] Threshold conditions for an ultraviolet wavelength GaN quantum-well laser
    Chow, W.W.
    Crawford, M.Hagerott
    Girndt, A.
    Koch, S.W.
    IEEE Journal on Selected Topics in Quantum Electronics, 4 (03): : 514 - 519
  • [24] Threshold conditions for an ultraviolet wavelength GaN quantum-well laser
    Chow, WW
    Crawford, MH
    Girndt, A
    Koch, SW
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (03) : 514 - 519
  • [25] Al0.35Ga0.65N pin diodes exhibiting sub-fA leakage currents
    Aslam, S
    Yan, F
    Franz, D
    Ferguson, I
    Asghar, A
    Payne, A
    ELECTRONICS LETTERS, 2005, 41 (14) : 820 - 822
  • [26] Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers
    Chenguang He
    Zhixin Qin
    Fujun Xu
    Mengjun Hou
    Shan Zhang
    Lisheng Zhang
    Xinqiang Wang
    Weikun Ge
    Bo Shen
    Scientific Reports, 5
  • [27] A self-powered, visible-blind ultraviolet photodetector based on n-Ga:ZnO nanorods/p-GaN heterojunction
    Yang, Lu
    Zhou, Hai
    Xue, Mengni
    Song, Zehao
    Wang, Hao
    SENSORS AND ACTUATORS A-PHYSICAL, 2017, 267 : 76 - 81
  • [28] Effects of p-GaN growth temperature on a green InGaN/GaN multiple quantum well
    Ju, Jin-Woo
    Zhu, Junjie
    Kim, Hwa-Soo
    Lee, Cheul-Ro
    Lee, In-Hwan
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 50 (03) : 810 - 813
  • [29] Free and bound excitonic effects in Al0.5Ga0.5N/Al0.35Ga0.65N MQWs with different Si-doping levels in the well layers
    He, Chenguang
    Qin, Zhixin
    Xu, Fujun
    Hou, Mengjun
    Zhang, Shan
    Zhang, Lisheng
    Wang, Xinqiang
    Ge, Weikun
    Shen, Bo
    SCIENTIFIC REPORTS, 2015, 5
  • [30] High Spectrum Selectivity Ultraviolet Photodetector Fabricated from an n-ZnO/p-GaN Heterojunction
    Zhu, H.
    Shan, C. X.
    Yao, B.
    Li, B. H.
    Zhang, J. Y.
    Zhao, D. X.
    Shen, D. Z.
    Fan, X. W.
    JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (51): : 20546 - 20548