Thermal improvement and stability of Si3N4/GeN x/p- and n-Ge structures prepared by electron-cyclotron-resonance plasma nitridation and sputtering at room temperature

被引：0
|
作者：
Tokyo University of Science, Suwa, Chino, Nagano 391-0292, Japan [1 ]
不详 [2 ]
机构：
来源：
Jpn. J. Appl. Phys. | / 9卷
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Electronic properties
引用
收藏
相关论文
共 12 条
  • [1] Thermal Improvement and Stability of Si3N4/GeNx/p- and n-Ge Structures Prepared by Electron-Cyclotron-Resonance Plasma Nitridation and Sputtering at Room Temperature
    Fukuda, Yukio
    Okamoto, Hiroshi
    Iwasaki, Takuro
    Izumi, Kohei
    Otani, Yohei
    Ishizaki, Hiroki
    Ono, Toshiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (09)
  • [2] ROOM-TEMPERATURE SI3N4 AND GE3N4 GROWTHS BY SI AND GE SURFACE IRRADIATION WITH A N2 ELECTRON-CYCLOTRON RESONANCE PLASMA - AN X-RAY PHOTOEMISSION-STUDY
    BOLMONT, D
    BISCHOFF, JL
    LUTZ, F
    KUBLER, L
    APPLIED PHYSICS LETTERS, 1991, 59 (21) : 2742 - 2744
  • [3] ON THE ACCUMULATION CAPACITANCE OF SI3N-4/SI/GAAS STRUCTURES FABRICATED IN AN ELECTRON-CYCLOTRON-RESONANCE PLASMA
    IVANCO, J
    BALVINSKY, OE
    THURZO, I
    BARTOS, J
    PINCIK, E
    APPLIED SURFACE SCIENCE, 1993, 72 (01) : 31 - 37
  • [4] Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure
    Diatezua, DM
    Wang, Z
    Park, D
    Chen, Z
    Rockett, A
    Morkoc, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (02): : 507 - 510
  • [5] Si3N4 on GaAs by direct electron cyclotron resonance plasma assisted nitridation of Si layer in Si/GaAs structure
    Diatezua, D.M.
    Wang, Z.
    Park, D.
    Chen, Z.
    Rockett, A.
    Morkoc, H.
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1998, 16 (02):
  • [6] Thermal stability of TiAlN/TiAlON/Si3N4 tandem absorbers prepared by reactive direct current magnetron sputtering
    Barshilia, Harish C.
    Selvakumar, N.
    Rajam, K. S.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (02): : 383 - 390
  • [7] The spectral selective absorbing characteristics and thermal stability of SS/TiAlN/TiAlSiN/Si3N4 tandem absorber prepared by magnetron sputtering
    Feng, Junxiao
    Zhang, Shuo
    Lu, Yu
    Yu, Hongwen
    Kang, Limin
    Wang, Xianyang
    Liu, Zongming
    Ding, Haicheng
    Tian, Yun
    Ouyang, Jun
    SOLAR ENERGY, 2015, 111 : 350 - 356
  • [8] CFX(X=1-3) radical densities during Si, SiO2, and Si3N4 etching employing electron cyclotron resonance CHF3 plasma
    Miyata, K
    Hori, M
    Goto, T
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03): : 568 - 572
  • [9] Electrical characteristics of p-n junction diodes fabricated by Si epitaxy at low temperature using sputtering-type electron cyclotron resonance plasma
    Wang, JL
    Nakashima, H
    Gao, JS
    Iwanaga, K
    Furukawa, K
    Muraoka, K
    Sung, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (02): : 333 - 336
  • [10] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF AL/SI AND AL/SI3N4 INTERFACES PREPARED BY ROOM-TEMPERATURE BONDING METHOD
    TAKAGI, H
    TAKAHASHI, Y
    SUGA, T
    BANDO, Y
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1991, 55 (08) : 907 - 908
12