Process monitor of plasma charging damage in ultra-thin gate oxide

被引：0
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作者：
Zhao, Wen-Bin [1 ,2 ]
Li, Lei-Lei [1 ,2 ]
Yu, Zong-Guang [2 ]
机构：
[1] Xidian University School of Microelectronics, Xi'an 710071, China
[2] No.58 Institute, China Electronic Technology Group Corporation, Wuxi 214035, China
来源：
Tien Tzu Hsueh Pao/Acta Electronica Sinica | 2009年 / 37卷 / 05期
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页码：947 / 950
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