Optimization of efficiency of CsPbI2Br by using different electron transport and hole transport layers: A DFT and SCAPS-1D simulation

被引:3
作者
Mukaddar, Sk [1 ,2 ]
机构
[1] SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Kattankulathur 603203, Tamil Nadu, India
[2] SRM Univ AP, Dept Phys, Amaravati 522240, Andhra Prades, India
来源
MICRO AND NANOSTRUCTURES | 2025年 / 197卷
关键词
ETL; HTL; Photovoltaic; Absorber; Defect; PEROVSKITE SOLAR-CELLS; PERFORMANCE; DESIGN;
D O I
10.1016/j.micrna.2024.208024
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this article, we embark on an exciting journey to identify the ideal electron transport layers (ETL) and hole transport layers (HTL) that can significantly boost the efficiency of CsPbI2Br-based solar cells. Utilizing first-principles calculations with the modified Becke-Johnson potential (mBJ) and spin-orbit correction, we uncovered the direct band gap property of CsPbI2Br, measuring an impressive 1.81 eV. Coupled with its remarkable absorption coefficient of 105 cm-1 and minimal reflectivity throughout the visible spectrum, this material stands out as an emerging absorber layer for photovoltaic cells. Also, using cutting-edge SCAPS-1D simulations, we explore a range of ETL materials, including TiO2, ZnO, CdS, STO, WS2, and Nb2O5, alongside HTL options like NiO, Spiro, SnS, CuI, Cu2O, and CuSbS2. Our findings reveal that Nb2O5 and Cu2O emerge as the most promising candidates for ETL and HTL to enhance the performance of CsPbI2Br absorbers, opening the door to more efficient solar energy solutions. The efficiencies achieved with the ETL and HTL-based solar cells, specifically Au/CsPbI2Br/Nb2O5/FTO and Au/Cu2O/CsPbI2Br/FTO, are impressive, standing at 17.91 % and 18.13 %, respectively. Moreover, various factors such as the thickness of the absorbing layer, HTL, and ETL, along with total defect density (Nt), donor and acceptor defect densities of both the absorber and the transport layers, and the device temperature, significantly influence the performance metrics of the Au/Cu2O/CsPbI2Br/Nb2O5/FTO solar cell. Our findings reveal impressive values: a maximum open-circuit voltage (Voc) of 1.21 V, a short-circuit current (Jsc) of 32.47 mA/cm2, a fill factor of 87.7 %, and an efficiency (eta) of 22.31 %. These findings exceed the previously reported values for halide perovskite based solar cells, underscoring the promise of this research in shaping the future of cutting-edge perovskite-based solar cells.
引用
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页数:17
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