Laser-diode-pumped Cr4+:YAG passively Q-switched intracavity PbWO4 mode-locked Raman laser

被引:0
|
作者
Jia, Haixu [1 ]
Ding, Shuanghong [1 ]
Liu, Jiajia [1 ]
Ding, Ze [1 ]
机构
[1] School of Photo-Electronic Information Science and Technology, Yantai University, Yantai, 264005, Shandong
来源
Zhongguo Jiguang/Chinese Journal of Lasers | 2014年 / 41卷 / 10期
关键词
Cr[!sup]4+[!/sup]:YAG passively Q-switched; Intracavity mode-locked Raman laser; Lasers; Lead tungstate (PbWO[!sub]4[!/sub]) crystal; Stimulated Raman scattering;
D O I
10.3788/CJL201441.1002007
中图分类号
学科分类号
摘要
A laser-diode-pumped Cr4+:YAG passively Q-switched intracavity PbWO4 mode-locked Raman laser is demonstrated. Stable and Q-switched mode-locked laser output of modulation depth 100% is realized. A maximum average output power of 582 mW is obtained when the incident pump power is 6.3 W corresponding to an overall pump light-first-order Stokes conversion efficiency of 9.24% and a slope efficiency of 10.6%. The Q-switched pulse with repetition rate of 41.3 kHz and pulse width of 6 ns is obtained. The width of the mode-locked pulse is estimated to be less than 207 ps with 1.1 GHz the repetition rate of 1.1 GHz.
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页数:6
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