共 44 条
- [33] INFLUENCE OF ELECTRON-IRRADIATION AT VARIOUS TEMPERATURES ON THE MINORITY-CARRIER LIFETIME IN EPITAXIAL SILICON P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (03): : 340 - 341
- [35] EXPERIMENTAL INVESTIGATIONS ON THE INFLUENCE OF SURFACE AND INTERFACE RECOMBINATION ON THE MINORITY-CARRIER LIFETIME IN LPE-GAP-N,SI VPE-GAP-N,TE, AND VPE-GAAS0.12P0.88-N,TE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 96 (02): : 683 - 689
- [40] MEASUREMENT OF THE MINORITY-CARRIER LIFETIME IN A SEMICONDUCTOR WAFER BY A 2-MERCURY-PROBE METHOD AND ITS APPLICATION TO EVALUATION OF THE SURFACE RECOMBINATION VELOCITY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (01): : L162 - L165