Smooth surface morphology of hydrogenated amorphous silicon film prepared by plasma enhanced chemical vapor deposition

被引：3
作者：
State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China [1 ]
不详 [2 ]
机构：
[1] State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
[2] Graduate School of Chinese Academy of Sciences
来源：
Plasma Sci. Technol. | 2009年 / 5卷 / 569-575期
关键词：
Hydrogenated amorphous silicon film; Plasma enhanced chemical vapor deposition; Surface roughness;
D O I：
10.1088/1009-0630/11/5/11
中图分类号：
学科分类号：
摘要：
Influence of the parameters of plasma enhanced chemical vapor deposition (PECVD) on the surface morphology of hydrogenated amorphous silicon (α-Si:H) film was investigated. The root-mean-square (RMS) roughness of the film was measured by atomic force microscope (AFM) and the relevant results were analyzed using the surface smoothing mechanism of film deposition. It is shown that an α-Si:H film with smooth surface morphology can be obtained by increasing the PH3/N2 gas flow rate for 10% in a high frequency (HF) mode. For high power, however, the surface morphology of the film will deteriorate when the SiH4 gas flow rate increases. Furthermore, optimized parameters of PECVD for growing the film with smooth surface were obtained to be SiH4: 25 sccm (standard cubic centimeters per minute), Ar: 275 sccm, 10%PH3/N2: 2 sccm, HF power: 15 W, pressure: 0.9 Torr and temperature: 350°C. In addition, for in thick film deposition on silicon substrate, a N2O and NH3 preprocessing method is proposed to suppress the formation of gas bubbles.
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页码：569 / 575
页数：6
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