Integration process of impact-ionization metal-oxide-semiconductor devices with tunneling field-effect-transistors and metal-oxide-semiconductor field-effect transistors

被引：0
作者：
Choi, Woo Young [1 ,2 ]
Lee, Jong Duk [1 ,2 ]
Park, Byung-Gook [1 ,2 ]
机构：
[1] Inter-University Semiconductor Research Center, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-742, Korea, Republic of
[2] School of Electrical Engineering and Computer Sciences, Seoul National University, San 56-1, Sillim-dong, Gwanak-gu, Seoul 151-600, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 01期
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摘要：
Journal article (JA)
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页码：122 / 124
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