Superconductivity study of GaN highly doped by transition metals

被引：0

作者：

机构：

[1] Institute of Experimental Physics, Faculty of Physics, University of Warsaw, 00-681 Warsaw

[2] Faculty of Physics, Warsaw University of Technology, 00-662 Warsaw

[3] High Pressure Research Centre UNIPRESS, PAS, 01-142 Warsaw

来源：

| 1600年 / Polska Akademia Nauk卷 / 124期

关键词：

Gallium arsenide - Gallium phosphide - Temperature - III-V semiconductors - Single crystals - Transition metals;

D O I：

10.12693/APhysPolA.124.877

中图分类号：

学科分类号：

摘要：

GaN:Cr and GaN:Fe single crystals as well as GaN:Mn micropowders highly doped by transition metals were grown to investigate low temperature superconductivity. Magnetic measurements revealed type I superconductivity with TC 6 K and HC 600 Oe, identical for all compounds and also identical to that observed before in GaP:Cr and GaAs:Cr. The presence of amorphous inclusions of gallium may explain existing superconductivity as a result of a phase transition leading to β-Ga during cooling down of the sample. Since the observed parameters are close to those characteristic for superconducting Ga(II) this possibility could not be ruled out.

引用

页码：877 / 880

页数：3

共 20 条

[1]

Alekseevskii N.E., Samsonov G.V., Shulishova O.I., Zh. Eksp. Teor. Fiz, 44, (1963)

[2]

Phys Sov. JETP-USSR, 17, (1963)

[3]

Berman I.V., Brandt N.B., Sidorov V.I., Pisma Zh. Eksp. Teor. Fiz, 14, (1971)

[4]

Sov. Phys.-JETP Lett, 14, (1971)

[5]

Vereshchagin L.F., Yakovlev E.N., Timofeev Yu.A., Vinogradov B.V., Pisma Zh. Eksp. Teor. Fiz, 26, (1977)

[6]

Sov. Phys.-JETP Lett, 26, (1977)

[7]

Rabenau A., Berben T.J., Phys. Lett, 12, (1964)

[8]

Kravchenko V.S., Graifer M.Z., Starikov M.A., Klimenko A.G., Izv. Akad. Nauk SSSR Neorg. Mater, 18, (1982)

[9]

Bull. Acad. Sci. USSR Inorg. Mater, 18, (1982)

[10]

Zaleski A.J., Nyk M., Strek W., Appl. Phys. Lett, 90, (2007)

← 1 2 →