Origin of very low effective barrier height in magnetic tunnel junctions with a semiconductor GaOx tunnel barrier

被引：0
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作者：
Watanabe, Suguru [1 ]
Saito, Hidekazu [2 ]
Mineno, Yusuke [2 ,3 ]
Yuasa, Shinji [2 ]
Ando, Koji [2 ]
机构：
[1] Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
[2] Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan
[3] Toho University, Funabashi, Chiba 274-0072, Japan
来源：
Japanese Journal of Applied Physics | 2011年 / 50卷 / 11 PART 1期
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摘要：
Iron compounds
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