Radio-frequency small-signal and noise modeling for silicon-on-insulator dynamic threshold voltage metal-oxide-semiconductor field-effect transistors

被引：0
|
作者：
Wang, Sheng-Chun [1 ,2 ]
Su, Pin [1 ]
Chen, Kun-Ming [2 ]
Huang, Sheng-Yi [3 ]
Hung, Cheng-Chou [3 ]
Huang, Guo-Wei [2 ]
机构：
[1] Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
[2] National Nano Device Laboratories, Hsinchu 300, Taiwan
[3] United Microelectronics Corporation, Hsinchu 300, Taiwan
来源：
Japanese Journal of Applied Physics | 2009年 / 48卷 / 4 PART 2期
关键词：
Analytical equations - Dynamic threshold - Junction capacitances - Model parameters - Radio frequencies - Signal and noise modeling - Silicon-on- insulators (SOI) - Source and drains;
D O I：
04C041
中图分类号：
学科分类号：
摘要：
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