Radio-frequency small-signal and noise modeling for silicon-on-insulator dynamic threshold voltage metal-oxide-semiconductor field-effect transistors

被引：0

作者：

Wang, Sheng-Chun ^{[1
,2
]}

Su, Pin ^{[1
]}

Chen, Kun-Ming ^{[2
]}

Huang, Sheng-Yi ^{[3
]}

Hung, Cheng-Chou ^{[3
]}

Huang, Guo-Wei ^{[2
]}

机构：

[1] Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

[2] National Nano Device Laboratories, Hsinchu 300, Taiwan

[3] United Microelectronics Corporation, Hsinchu 300, Taiwan

来源：

Japanese Journal of Applied Physics | 2009年 / 48卷 / 4 PART 2期

关键词：

Analytical equations - Dynamic threshold - Junction capacitances - Model parameters - Radio frequencies - Signal and noise modeling - Silicon-on- insulators (SOI) - Source and drains;

D O I：

04C041

中图分类号：

学科分类号：

摘要：

引用

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