Surface reconstructions of II-VI compound semiconductor surfaces

被引：2

作者：

Universität Würzburg, Experimentelle Physik II, 97074 Würzburg, Germany ^{[1
]}

不详 ^{[2
]}

机构：

[1] Universität Würzburg, Experimentelle Physik II

[2] Universität Würzburg, Experimentelle Physik III

来源：

Physica Status Solidi (C) Current Topics in Solid State Physics | 2007年 / 4卷 / 09期

关键词：

Semiconductor materials;

D O I：

10.1002/pssc.200775425

中图分类号：

学科分类号：

摘要：

The surface structures of two model systems in the field of II-VI semiconductors - the ZnSe(001)-c(2 × 2) and the BeTe(001)-2 × 1 surface - are derived from spot-profile analysis low-energy electron diffraction and surface X-ray diffraction (SXRD). For the first, a Zn-vacancy model could be unambiguously confirmed by the comparison of our SXRD data with density functional theory calculations. The BeTe surface consists of [11̄0]-oriented Te dimers inducing a large amount of surface strain. This causes pronounced vertical and lateral atomic displacements in the underlying BeTe bilayers which effectively relieve the surface strain. The experimentally derived atomic geometry is in very good agreement with the results of density functional theory calculations. © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.

引用

页码：3183 / 3190

页数：7