Time-dependent analysis of low VDD program operation in double-gate SONOS memories by full-band Monte Carlo simulation

被引：0

作者：

Giusi, G. ^{[1
]}

Iannaccone, G. ^{[2
]}

Ravaioli, U. ^{[3
]}

机构：

[1] DEIS, University of Calabria, Via P. Bucci 41C, I-87036 Arcavacata di Rende (CS), Italy

[2] DIIEIT, University of Pisa, Via Caruso 16, I-56126 Pisa, Italy

[3] University of Illinois at Urbana-Champaign, Urbana, IL 61801, United States

来源：

Journal of Applied Physics | 2009年 / 106卷 / 10期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用