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Effect of HfO2 addition on the high-temperature oxidation behavior of Si-HfO2-based composites at 1300 ° C and 1400 ° C
被引:0
|作者:
Wang, Yidan
[1
]
He, Jian
[1
,2
]
Guo, Qian
[1
]
Li, Yuan
[1
,3
]
Guo, Hongbo
[1
,2
]
机构:
[1] Beihang Univ, Sch Mat Sci & Engn, 37 Xueyuan Rd, Beijing 100191, Peoples R China
[2] Beihang Univ, Key Lab High Temp Struct Mat & Coatings Technol, Minist Ind & Informat Technol, 37 Xueyuan Rd, Beijing 100191, Peoples R China
[3] Aerosp Res Inst Mat & Proc Technol, Sci & Technol Adv Funct Composites Lab, Beijing 100076, Peoples R China
基金:
中国国家自然科学基金;
关键词:
Environmental barrier coatings;
High temperature oxidation resistance;
SPS;
Hafnia;
Silicon;
ENVIRONMENTAL BARRIER COATINGS;
WATER-VAPOR;
BINARY OXIDES;
STABILITY;
HAFNIA;
D O I:
10.1016/j.jallcom.2024.178261
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
Si-HfO2 composite has been proposed to be a novel bond coat material in environmental barrier coatings (EBCs) used at ultra-high temperatures. However, the oxidation behavior of Si-HfO2 especially the effect of HfO2 is still in debate. In this study, four Si-HfO2 materials with different Si-to-HfO2 ratios were designed and prepared by spark plasma sintering (SPS) method. The effect of HfO2 on high-temperature oxidation behavior of the Si-HfO2 composites at 1300 degrees C and 1400 degrees C was investigated. The results indicated that the as-prepared Si-HfO2 composites by SPS contained Si and HfO2 two phases, preventing the formation of SiO2 during preparation. After 100 h of isothermal oxidation at 1300 degrees C, a protective oxide layer composed of SiO2, HfO2 and HfSiO4 was formed on the surface and an intermediate product HfSi2 phase was observed due to the oxygen-deficient state under the oxide layer. While after 100 h of oxidation at 1400 degrees C, globular Si precipitated on the surface and HfO2 was found surrounding it. More HfO2 and reaction product HfSiO4 formed a skeleton structure which played a crucial role in the material's thermal stability. The detailed high-temperature oxidation mechanisms of Si-HfO2 composites with various Si-to-HfO2 ratios at 1300 degrees C and 1400 degrees C were finally discussed.
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