Theoretical study on magnetoelectric and thermoelectric properties for graphene devices

被引：0
|
作者：
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Atsugi, Kanagawa 243-0198, Japan [1 ]
机构：
来源：
Jpn. J. Appl. Phys. | / 7 PART 1卷
关键词：
Compendex;
D O I：
070115
中图分类号：
学科分类号：
摘要：
Graphene
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