Thermoelectric properties of MoS2-MoTe2 and MoS2-MoSe2lateral hetero-structures: The effects of external magnetic, transverse electric fields and nanoribbon width

Extensive research is underway to improve the thermoelectric properties of materials by enhancing the figure of merit (ZT). In this study, we are investigating the thermoelectric properties of MoS2/MoTe2 and MoS2/MoSe2 lateral heterostructures (LH-S) under the influence of external magnetic fields (EMF) and transverse electric fields (TEF). We employ the non-equilibrium Green's function (N-EGF) and tight-binding (TB) methods for our analysis. The results obtained indicate that the ZT for MoS2-MoTe2 and MoS2-MoSe2 LH-S enhanced with an increase in the TEF. The ZT of MoS2-MoSe2 LH-S increases near room temperature, while the ZT of MoS2-MoTe2 LH-S increases with an increase in EMF across the entire temperature range. Additionally, the ZT for MoS2-MoSe2 LH-S increases with an increase in the nanoribbon width, whereas for MoS2-MoTe2 LH-S, it decreases. The results reveal that the semiconductor type of MoS2-MoSe2 and MoS2-MoTe2 LH-S changes from n-type to p-type when subjected to EMF and transverse TEF. The examination of the temperature dependence of ZT in the presence of TEF and EMF for MoS2-MoTe2 and MoS2-MoSe2 LH-S indicates that these structures are highly promising candidates for use in electrical devices.