Damage analysis of plasma-etched n-gan crystal surface by nitrogen k near-edge x-ray absorption fine structure spectroscopy

被引：0

|

作者：

Niibe, Masahito ^{[1
]}

Kotaka, Takuya ^{[1
]}

Kawakami, Retsuo ^{[2
]}

Inaoka, Takeshi ^{[2
]}

Tominaga, Kikuo ^{[2
]}

Mukai, Takashi ^{[3
]}

机构：

[1] Laboratory of Advanced Science and Technology for Industry, University of Hyogo Kamigori, Hyogo 678-1205, Japan

[2] Institute of Socio-Techno Science Technology, University of Tokushima, Tokushima 770-8506, Japan

[3] Nichia Corporation Anan, Tokushima 774-0044, Japan

来源：

Japanese Journal of Applied Physics | 2012年 / 51卷 / 1 PART 2期

关键词：

Compendex;

D O I：

01AB02

中图分类号：

学科分类号：

摘要：

III-V semiconductors

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