Electromigration in Cu(Al) and Cu(Mn) damascene lines

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[1] Hu, C.-K.
[2] Ohm, J.
[3] Gignac, L.M.
[4] Breslin, C.M.
[5] Mittal, S.
[6] Bonilla, G.
[7] Edelstein, D.
[8] Rosenberg, R.
[9] Choi, S.
[10] An, J.J.
[11] Simon, A.H.
[12] Angyal, M.S.
[13] Clevenger, L.
[14] Maniscalco, J.
[15] Nogami, T.
[16] Penny, C.
[17] Kim, B.Y.
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Hu, C.-K. (haohu@us.ibm.com) | 1600年 / American Institute of Physics Inc.卷 / 111期
关键词：
The effects of impurities; Mn or Al; on interface and grain boundary electromigration (EM) in Cu damascene lines were investigated. The addition of Mn or Al solute caused a reduction in diffusivity at the Cudielectric cap interface and the EM activation energies for both Cu-alloys were found to increase by about 0.2 eV as compared to pure Cu. Mn mitigated and Al enhanced Cu grain boundary diffusion; however; no significant mitigation in Cu grain boundary diffusion was observed in low Mn concentration samples. The activation energies for Cu grain boundary diffusion were found to be 0.74 ± 0.05 eV and 0.77 ± 0.05 eV for 1.5 μm wide polycrystalline lines with pure Cu and Cu (0.5 at.% Mn) seeds; respectively. The effective charge number in Cu grain boundaries Z*GB was estimated from drift velocity and was found to be about -0.4. A significant enhancement in EM lifetimes for Cu(Al) or low Mn concentration bamboo-polycrystalline and near-bamboo grain structures was observed but not for polycrystalline-only alloy lines. These results indicated that the existence of bamboo grains in bamboo-polycrystalline lines played a critical role in slowing down the EM-induced void growth rate. The bamboo grains act as Cu diffusion blocking boundaries for grain boundary mass flow; thus generating a mechanical stress-induced back flow counterbalancing the EM force; which is the equality known as the Blech short length effect. © 2012 American Institute of Physics;
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