Effect of growth temperature on crystalline quality of epitaxial MnSnO3 thin films

Epitaxial single-crystal MnSnO3 thin films were deposited on single-crystal Al2O3 substrates using pulsed laser deposition (PLD) technology, and an analysis was conducted on the impact of the growth temperature on the crystalline quality of the films. The test results show that the growth of MnSnO3 thin films at 900 degrees C results in sharp diffraction peaks with high intensity in the c-axis direction, better crystalline quality (FWHM of XRD 2 theta peak: 0.24 degrees), less roughness (RSM: 0.67 nm) and wider optical band gap (E-g = 2.91 eV) compared with the grown samples at other temperatures. The MnSnO3 thin film deposited at 900 degrees C exhibits strong photoluminescence at 341.1 and 423.1 nm, as well as high ferroelectric polarization of similar to 40 mu C/cm(2). The fabrication of epitaxial MnSnO3 thin films opens up a new avenue for further research into their ferroelectric photovoltaic properties.