A random-walk based wear-leveling algorithm for large-capacity SSDs

被引：0

作者：

Zhao, Peng ^{[1
]}

Bai, Shi ^{[1
]}

机构：

[1] Department of Computer Science and Technology, Tsinghua University

来源：

Jisuanji Xuebao/Chinese Journal of Computers | 2012年 / 35卷 / 05期

关键词：

Flash memory; Random walk; SSD; Wear leveling;

D O I：

10.3724/SP.J.1016.2012.00972

中图分类号：

学科分类号：

摘要：

Large-capacity flash based SSD (Solid-state disk) has the potential to become the storage system alternative in the future. It has many advantages: non-volatility, low-power consumption and shock resistance and so on. However, reliability is still a critical problem when using NAND flash memory. Every block of NAND flash memory has a limited number of write/erase cycles, after the limited number, the data that keep in the block become unreliable. Many wear-leveling algorithms have been proposed to solve the reliability problem. But with the capacity of SSD increases, these algorithms always need more and more DRAM capacity. We propose a random-walk based wear-leveling algorithm for large-capacity SSD that can obviously reduce memory consumption (only 15.6% DRAM space compared to BET algorithm) for storing wearing information and achieve the same performance compare with other algorithms.

引用

页码：972 / 978

页数：6

共 10 条

[1]

K9XXG08XXM flash memory specification, (2007)

[2]

Agrawal N., Prabhakaran V., Wobber T., Et al., Design tradeoffs for SSD performance, Proceedings of the USENIX 2008 Annual Technical Conference, pp. 57-70, (2008)

[3]

Gal E., Toledo S., Algorithms and data structures for flash memories, ACM Computing Surveys, 37, 2, (2005)

[4]

Ban A., Wear leveling of static areas in flash memory, (2001)

[5]

Woodhouse D., JFFS: The journalling flash file system, Proceedings of the Ottawa Linux Symposium, (2001)

[6]

Chang L., On efficient wear leveling for large-scale flash memory storage systems, Proceedings of the 2007 ACM symposium on Applied computing, (2007)

[7]

Chang Y.H., Hsieh J.W., Kuo T.W., Endurance enhancement of flash-memory storage systems: An efficient static wear leveling design, Proceedings of the 44th Annual Design Automation Conference, (2007)

[8]

Spitzer F., Principles of Random Walk, (2001)

[9]

Boyd J.N., Raychowdhury P.N., Biased random walks, Virginia Journal of Science, 46, 1, (1995)

[10]

Kim J.M., Noh S.H., Et al., A space efficient flash translation layer for compact flash systems, IEEE Transactions on Consumer Electronics, 48, 2, pp. 366-375, (2002)

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