Influence of atomic ratio of Mg to Sn on thermoelectric properties of Mg2Sn films

被引：0

作者：

Liu, Ying ^{[1
]}

Song, Guihong ^{[1
]}

Tai, Kaiping ^{[2
]}

Yu, Zhi ^{[2
]}

Ran, Yijun ^{[2
]}

He, Juan ^{[2
]}

Wu, Yusheng ^{[1
]}

机构：

[1] Shenyang Univ Technol, Sch Mat Sci & Technol, Shenyang 110870, Peoples R China

[2] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China

来源：

THIN SOLID FILMS | 2025年 / 809卷

基金：

中国国家自然科学基金;

关键词：

Thermoelectric material; Magnesium stannide; Thin films; Seebeck coefficient; Electrical conductivity; SOLID-SOLUTIONS; THIN-FILMS; PERFORMANCE; SB;

D O I：

10.1016/j.tsf.2024.140585

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The influence of Mg/Sn ratio of on the thermoelectric properties of Mg-Sn films was deeply studied through preparing a series of Mg2Sn films with different Mg and Sn atomic ratios on SiO2/Si substrate. The results showed that the phase structure of the deposited Mg2Sn films varied from a metastable orthogonal phase to a mixture of orthogonal and cubic phase, and then to a highly symmetric cubic phase with increasing [Mg]/[Sn]. Meanwhile, with increasing [Mg]/[Sn], the carrier concentration and electrical conductivity of the deposited films first decreased and then increased, while the carrier mobility and Seebeck coefficient varied in an opposite trend. The cubic Mg2Sn phase film with [Mg]/[Sn] = 1.94 has the highest Seebeck coefficient and appropriate electrical conductivity, reaching the highest power factor of 3.10 mu W cm(-1) K-2 at 235 degrees C and figure of merit of 0.059 at 125 degrees C.

引用

页数：10

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