Effect of inert gas on radicals during diamond film being deposited by HFCVD

被引：0

作者：

Province Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Technology, Wuhan Institute of Technology, Wuhan, China ^{[1
]}

机构：

[1] Province Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Technology, Wuhan Institute of Technology, Wuhan

来源：

Qiangjiguang Yu Lizishu | / 12卷

关键词：

Diamond films; Hot filament chemical vapor deposition; Inert gas; Optical emission spectroscopy;

D O I：

10.11884/HPLPB201527.122005

中图分类号：

学科分类号：

摘要：

The optical emission spectroscopy (OES) is an effective method for plasma diagnosing. In this article, OES was used to in situ measure the hot filament chemical vapor deposition(HFCVD) plasma of acetone/H2 system, acetone/H2/He system and acetone/H2/Ar system respectively. The intensity of radicals, the intensity ratios of CH, Hβ to C2 and the value of electron temperature as a function of inert gas volume fraction were studied. The result shows that the spectrum intensities of radicals increase with the increasing of the inert gas volume fraction, and the influence of argon is much higher than that of helium. The intensity ratios of CH, Hβ to C2 and the value of electron temperature decrease with the increasing concentration of the inert gas in the feed gas. The intensity ratio of CH/C2, Hβ/C2 and the value of electron temperature are higher in the acetone/H2/He system than that in the acetone/H2/Ar system. © 2015, Editorial Office of High Power Laser and Particle Beams. All right reserved.

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页数：5