Etching characteristics of MgO doped lithium niobate in inductively coupled plasma

被引：0
作者：
Zhou, Yujie [1 ]
Feng, Liqun [1 ]
Sun, Junqiang [1 ]
机构：
[1] Wuhan National Laboratory of Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2012年 / 39卷 / 09期
关键词：
Etching rate; Inductively coupled plasma dry etching; Integrated optics; MgO doped lithium niobate; Microstructure fabrication; Optical devices;
D O I：
10.3788/CJL201239.0906001
中图分类号：
学科分类号：
摘要：
MgO doped lithium niobate (Mg:LiNbO 3) is a relatively hard crystal and is difficult for dry etching. Dry etching rate and morphology control of Mg:LiNbO 3 are key technologies in fabricating optoelectronic devices based on lithium niobate. Etching characteristics of Mg:LiNbO 3 crystal are studied by using Plasmalab System 100 (Oxford Instruments) with mixture gases of SF 6/Ar. The etching rates of different working parameters including inductively coupled plasma (ICP) power, reactive ion etching (RIE) power, working pressure and SF 6/Ar flow ratio are evaluated. The surface profile is also affected by various ratios of SF 6/Ar gas mixture. The optimal etching conditions for Mg:LiNbO 3 ridge-shaped waveguide are found to be ICP power of 1000 W, RIE power of 150 W, total gas flux of 52 mL/min (standard condition of 0°C, 1 atm), chamber pressure of 0.532 Pa and the gas volume ratio of SF 6/(Ar+SF 6) of 0.077. Optical ridge-shaped waveguide with approximately 2.5 m depth, 74.8° etching sidewalls and smooth top surface is successfully fabricated using the optimized etching conditions.
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