Temperature-dependent characteristics of an InP/InGaAs double heterojunction bipolar transistor with a step-graded InAlGaAs collector

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作者：
Chen, Tzu-Pin [1 ]
Chen, Wei-Hsin [1 ]
Lee, Chi-Jhung [1 ]
Chu, Kuei-Yi [1 ]
Chen, Li-Yang [1 ]
Hung, Ching-Wen [1 ]
Tsai, Tsung-Han [1 ]
Cheng, Shiou-Ying [2 ]
Liu, Wen-Chau [1 ]
机构：
[1] Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, 70101, Taiwan
[2] Department of Electronic Engineering, National Ilan University, No. 1, Section 1, Shen-Lung Road, ILan, 26041, Taiwan
来源：
Journal of Applied Physics | 2008年 / 103卷 / 11期
关键词：
Indium phosphide - Aluminum compounds - III-V semiconductors - Semiconducting indium phosphide - Gallium compounds - Heterojunction bipolar transistors - Impact ionization - Millimeter waves;
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