Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction

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作者：
Liu, B. [1 ]
Zhang, R. [1 ]
Xie, Z.L. [1 ]
Lu, H. [1 ]
Liu, Q.J. [1 ]
Zhang, Z. [1 ]
Li, Y. [1 ]
Xiu, X.Q. [1 ]
Chen, P. [1 ]
Han, P. [1 ]
Gu, S.L. [1 ]
Shi, Y. [1 ]
Zheng, Y.D. [1 ]
Schaff, W.J. [2 ]
机构：
[1] Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
[2] Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14583, United States
来源：
Journal of Applied Physics | 2008年 / 103卷 / 02期
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