Microstructure and dislocation of epitaxial InN films revealed by high resolution x-ray diffraction

被引：0

作者：

Liu, B. ^{[1
]}

Zhang, R. ^{[1
]}

Xie, Z.L. ^{[1
]}

Lu, H. ^{[1
]}

Liu, Q.J. ^{[1
]}

Zhang, Z. ^{[1
]}

Li, Y. ^{[1
]}

Xiu, X.Q. ^{[1
]}

Chen, P. ^{[1
]}

Han, P. ^{[1
]}

Gu, S.L. ^{[1
]}

Shi, Y. ^{[1
]}

Zheng, Y.D. ^{[1
]}

Schaff, W.J. ^{[2
]}

机构：

[1] Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China

[2] Department of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14583, United States

来源：

Journal of Applied Physics | 2008年 / 103卷 / 02期

关键词：

D O I：

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学科分类号：

摘要：

Journal article (JA)

引用

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