Study on growth rate of diamond deposited by radio frequency assisted HFCVD method

被引：0
|
作者：
Sun, Xin-Yuan
Zhou, Ling-Ping
Li, Yu-Nong
Yi, Xue-Hua
Chen, Ben-Jing
机构：
[1] Department of Physics, Jinggangshan University, Ji'an 343009, China
[2] College of Material Science and Engineering, Hunan University, Changsha 410082, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2007年 / 36卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Diamond polycrystalline spheres were deposited via acetone and ethanol as carbon sources in HFCVD system respectively. Radio frequency discharge was applied in the system by connecting with either filament or substrate. So four different assisted-growth models were produced. Study on the rate of theses models was made in details. It is found that plasma enhancing can enhance growth rate of diamond dramatically. Growth rate of diamond under electron enhancing is slowest. Its rate is even slower than that of plasma enhancing with substrate biasing. Growth rate of plasma enhancing with substrate biasing gets slow when current of radio frequency discharge increases. However, growth rate of conventional HFCVD is related to the molecular structure of these carbon sources.
引用
收藏
页码：460 / 463
相关论文
共 50 条
  • [31] Nanoindentation Study of FePt Thin Films Deposited by Radio Frequency Magnetron Sputtering
    Chiu, Y. -J.
    Shen, C. -Y.
    Jian, S. -R.
    Chang, H. -W.
    Juang, J. -Y.
    Liao, Y. -Y.
    Fan, C. -L.
    NANOSCIENCE AND NANOTECHNOLOGY LETTERS, 2016, 8 (03) : 260 - 265
  • [32] Growth and characterization of diamond films deposited by dc discharge assisted hot filament chemical vapor deposition
    Cui, JB
    Shang, NG
    Liao, Y
    Li, JQ
    Fang, RC
    THIN SOLID FILMS, 1998, 334 (1-2) : 156 - 160
  • [33] OBSERVATION OF SPECTRAL AND NORMAL EMISSIVITY AS A METHOD OF SURFACE CONTROL DURING THE GROWTH OF DIAMOND FILMS DEPOSITED BY A MICROWAVE PLASMA-ASSISTED CVD TECHNIQUE
    BARRAT, S
    PIGEAT, P
    DIEGUEZ, I
    BAUERGROSSE, E
    WEBER, B
    THIN SOLID FILMS, 1995, 263 (02) : 127 - 133
  • [34] Effect of coupling of radio-frequency plasma on the growth of diamond films in a hot filament reactor
    Pai, MP
    Musale, DV
    Kshirsagar, ST
    Mitra, A
    Sainkar, SR
    THIN SOLID FILMS, 1998, 322 (1-2) : 167 - 176
  • [35] Oxygen flow rate effect on copper oxide thin films deposited by radio frequency magnetron sputtering
    Tadjine, Rabah
    Houimi, Amina
    Alim, Mohamed Mounes
    Oudini, Noureddine
    THIN SOLID FILMS, 2022, 741
  • [36] Properties of diamond films deposited by multi-cathode direct current plasma assisted CVD method
    Lee, JK
    Baik, YJ
    Eui, KY
    Park, JW
    DIAMOND AND RELATED MATERIALS, 2001, 10 (3-7) : 552 - 556
  • [37] Effect of Driving Frequency on Growth and Structure of Silicon Films Deposited by Radio-Frequency and Very-High-Frequency Magnetron Sputtering
    He, Haijie
    Ye, Chao
    Wang, Xiangying
    Huang, Fupei
    Liu, Yi
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2014, 3 (05) : Q74 - Q78
  • [38] Nanoscratch study of ZnO thin films deposited using radio frequency magnetron sputtering
    Yau, Wei-Hung
    Tseng, Pai-Chung
    Lian, Derming
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2011, 269 (12): : 1450 - 1454
  • [39] Fast deposition of diamond-like carbon films by radio frequency hollow cathode method
    Pang, Xiaolu
    Peng, Haili
    Yang, Huisheng
    Gao, Kewei
    Wu, Xiaolei
    Volinsky, Alex A.
    THIN SOLID FILMS, 2013, 534 : 226 - 230
  • [40] Micromechanical properties of carbon nitride films deposited by radio-frequency-assisted filtered cathodic vacuum arc
    Cheng, YH
    Tay, BK
    Lau, SP
    Qiao, XL
    Chen, JG
    Sun, ZH
    Xie, CS
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 75 (03): : 375 - 380
12345