Study on growth rate of diamond deposited by radio frequency assisted HFCVD method

被引：0
|
作者：
Sun, Xin-Yuan
Zhou, Ling-Ping
Li, Yu-Nong
Yi, Xue-Hua
Chen, Ben-Jing
机构：
[1] Department of Physics, Jinggangshan University, Ji'an 343009, China
[2] College of Material Science and Engineering, Hunan University, Changsha 410082, China
来源：
Rengong Jingti Xuebao/Journal of Synthetic Crystals | 2007年 / 36卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Diamond polycrystalline spheres were deposited via acetone and ethanol as carbon sources in HFCVD system respectively. Radio frequency discharge was applied in the system by connecting with either filament or substrate. So four different assisted-growth models were produced. Study on the rate of theses models was made in details. It is found that plasma enhancing can enhance growth rate of diamond dramatically. Growth rate of diamond under electron enhancing is slowest. Its rate is even slower than that of plasma enhancing with substrate biasing. Growth rate of plasma enhancing with substrate biasing gets slow when current of radio frequency discharge increases. However, growth rate of conventional HFCVD is related to the molecular structure of these carbon sources.
引用
收藏
页码：460 / 463
相关论文
共 50 条
  • [21] A study on nano-nucleation and interface of diamond film prepared by hot filament assisted with radio frequency plasma
    Liu, S
    Xie, EQ
    Sun, JW
    Ning, CC
    Jiang, YF
    MATERIALS LETTERS, 2003, 57 (11) : 1662 - 1669
  • [22] Diamond-like carbon films deposited in a dual microwave-radio-frequency plasma
    Kuttel, O.M.
    Martinu, L.
    Poitras, D.
    Klemberg-Sapieha, J.E.
    Wertheimer, M.R.
    Materials science & engineering. B, Solid-state materials for advanced technology, 1992, B11 (1-4): : 321 - 324
  • [23] RADIO-FREQUENCY PLASMA CHEMICAL VAPOR-DEPOSITION GROWTH OF DIAMOND
    MEYER, DE
    DILLON, RO
    WOOLLAM, JA
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 2325 - 2327
  • [24] Application of dual radio frequency inductive coupled plasma into CVD diamond growth
    Li, Jia-jun
    Li, Bin
    Zuo, Yong-gang
    Liu, Hao
    Bai, Yang
    Yuan, He-wei
    Li, Zhen-rui
    Xu, Kai
    Chen, Guang-chao
    VACUUM, 2018, 154 : 174 - 176
  • [25] High quality ZnO films deposited by radio-frequency magnetron sputtering using layer by layer growth method
    Ievtushenko, A. I.
    Karpyna, V. A.
    Lazorenko, V. I.
    Lashkarev, G. V.
    Khranovskyy, V. D.
    Baturin, V. A.
    Karpenko, O. Y.
    Lunika, M. M.
    Avramenko, K. A.
    Strelchuk, V. V.
    Kutsay, O. M.
    THIN SOLID FILMS, 2010, 518 (16) : 4529 - 4532
  • [26] Growth-rate dependence of the thermal conductivity of chemical-vapor-deposited diamond
    Balzaretti, NM
    Feldman, A
    Etz, ES
    Gat, R
    JOURNAL OF MATERIALS RESEARCH, 1999, 14 (09) : 3720 - 3724
  • [27] Growth-rate dependence of the thermal conductivity of chemical-vapor-deposited diamond
    Naira M. Balzaretti
    Albert Feldman
    Edgar S. Etz
    Roy Gat
    Journal of Materials Research, 1999, 14 : 3720 - 3724
  • [28] Nucleation and growth of Cu thin films on silicon wafers deposited by radio frequency sputtering
    Lin, JC
    Lee, C
    THIN SOLID FILMS, 1997, 307 (1-2) : 96 - 99
  • [29] Nucleation and growth of Cu thin films on silicon wafers deposited by radio frequency sputtering
    Natl Taiwan Univ of Science and, Technology, Taipei, Taiwan
    Thin Solid Films, 1-2 (96-99):
  • [30] Growth of nanocrystalline diamond by dual radio frequency inductively coupled plasma jet CVD
    Zuo, Yong-gang
    Li, Jia-jun
    Bai, Yang
    Liu, Hao
    Yuan, He-wei
    Chen, Guang-chao
    DIAMOND AND RELATED MATERIALS, 2017, 73 : 67 - 71
12345