Study on growth rate of diamond deposited by radio frequency assisted HFCVD method

Diamond polycrystalline spheres were deposited via acetone and ethanol as carbon sources in HFCVD system respectively. Radio frequency discharge was applied in the system by connecting with either filament or substrate. So four different assisted-growth models were produced. Study on the rate of theses models was made in details. It is found that plasma enhancing can enhance growth rate of diamond dramatically. Growth rate of diamond under electron enhancing is slowest. Its rate is even slower than that of plasma enhancing with substrate biasing. Growth rate of plasma enhancing with substrate biasing gets slow when current of radio frequency discharge increases. However, growth rate of conventional HFCVD is related to the molecular structure of these carbon sources.