Development of a polishing pad for achieving flat workpiece edge shape based on the finite element method analysis

被引:0
作者
Graduate Shcool of Engineering, Osaka University, 2-1 Yamada-oka, Suitashi, Osaka, 5650871, Japan [1 ]
机构
[1] Graduate Shcool of Engineering, Osaka University, Osaka, 5650871, 2-1 Yamada-oka, Suitashi
来源
Nihon Kikai Gakkai Ronbunshu C | 2009年 / 752卷 / 1108-1113期
关键词
Accuracy; Edge roll off; Finite element method; Glass disk; Lapping; Polishing; Polishing pad; Silicon wafer; Tool;
D O I
10.1299/kikaic.75.1108
中图分类号
学科分类号
摘要
In recent years, it is strongly demanded that edge roll off of workpiece be diminished in polishing silicon wafers and glass disks and, however, the conventional polishing technologies cannot meet the demand. In this study, using finite element method of a polishing model, the influences of the mechanical properties of a polishing pad on the contact stress distribution near the workpiece edge surface were investigated. As a result, it was found that a double-layered polishing pad had a possibility of suppressing the stress concentration significantly near the workpiece edge, namely, the edge roll off of workpiece. Based on the analytical result, a double-layered polishing pad having extra-fine fiber layer as upper layer and hard polymer layer as lower layer was developed. A series of polishing experiments for silicon wafers and glass plates revealed that the finishing efficiency was much higher than that obtained with conventional polishing pad and the edge roll off of the workpiece could be significantly improved.
引用
收藏
页码:1108 / 1113
页数:5
相关论文
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  • [1] Front End Processes, pp. 6-7, (2007)
  • [2] Srinvasa-Murthy C., Wang D., Beaudoin S.P., Bibby T., Holland K., Cale T.S., Stress Distribution in Chemical Mechanical Polishing, Thin Solid Films, 308-309, pp. 533-537, (1997)
  • [3] Byrne G., Young P., The Effect of Pad Wear on the Chemical Mechanical Polishing of Silicon Wafers, Annals of the CIRP, 48, L, (1999)
  • [4] Chul-Ho G., Sang-Shin P., Yoomin A., Three-Dimensional Wafer Scale Hydrodynamic Modeling for Chemical Mechanical Polishing, Thin Solid Films, 389, pp. 254-260, (2001)
  • [5] Evans C.J., Paul E., Domfeld D., Lucca D.A., Byrne G., Tricard M., Klocke F., Dambon O., Mullany B.A., Material Removal Mechanisms in Lapping and Polishing, Annals of the CIRP, 52, 2, pp. 1-21, (2003)
  • [6] Ship-Peng L., Yeou-Yih L., Jen-Ching H., Analysis of Retaining Using Finite Element Simulation in Chemical Mechanical Polishing Process, International Journal of Advances Manufacturing Technology, 34, pp. 547-555, (2007)
  • [7] Isobe A., Next generation CMP tool development with integration of various technologies, Journal of the Japan Society for Abrasive Technology, 50, 8, pp. 448-451, (2006)
  • [8] Kawano H., Takita K., Estimation of Removal Rate Distribution on Silicon Wafer (in Japanese), Proceedings of Autumn Conference of the Japan Society for Precision Engineering, (2002)
  • [9] Suzuki N., Hashimoto Y., Shamoto E., A Coupled Fluid-Structure Analysis of CMP Process (in Japanese), Proceedings of Autumn Conference of the Japan Society for Precision Engineering, pp. 1017-1018, (2007)
  • [10] Oshima N., Matsumura S., Kawai N., Park J.H., Yoshida K., The Influence that Property of Polishing Pad Gives to Silicon Polishing (in Japanese), Proceedings of Spring Conference of the Japan Society for Precision Engineering, pp. 221-222, (2007)