Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode

被引：0

作者：

Kaleli, B. ^{[1
]}

Nguyen, M.D. ^{[1
,2
,3
]}

Schmitz, J. ^{[1
]}

Wolters, R.A.M. ^{[1
,4
]}

Hueting, R.J.E. ^{[1
]}

机构：

[1] MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, Netherlands

[2] SolMateS BV, Drienerlolaan 5 (Bldg. 46), 7522 NB Enschede, Netherlands

[3] International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No. 1 Dai Co Viet Road, Hanoi, Viet Nam

[4] NXP Semiconductors Eindhoven, High Tech Campus 46, 5656 AE Eindhoven, Netherlands

来源：

Microelectronic Engineering | 2014年 / 119卷

关键词：

Ferroelectricity - Thin films - Leakage currents - Ferroelectric ceramics - Nickel compounds - Zirconium compounds - Electrodes - Piezoelectricity - Tin - Ferroelectric films - Lanthanum compounds - Polarization - Silicon wafers - Titanium nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：16 / 19