Resonant tunneling transport in a GaN/AIN multiple-quantum-well structure

被引：0
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作者：
Sakr, Salam [1 ]
Kotsar, Yulia [2 ]
Tchernycheva, Maria [1 ]
Warde, Elias [1 ]
Isac, Nathalie [1 ]
Monroy, Eva [2 ]
Julien, François H. [1 ]
机构：
[1] Institut d'Electronique Fondamentale, UMR 8622 CNRS, University Paris-Sud, 91405 Orsay Cedex, France
[2] Equipe Mixte Nano-Physique et Semiconducteurs, INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France
来源：
Applied Physics Express | 2012年 / 5卷 / 05期
关键词：
712.1 Semiconducting Materials - 714.2 Semiconductor Devices and Integrated Circuits - 801.4 Physical Chemistry;
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摘要：
21
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