Broadband MMIC power amplifier for C-X-Ku-band applications

被引：0
|
作者：
College of Information Engineering, Hebei University of Technology, Tianjin 300130, China [1 ]
不详 [2 ]
机构：
来源：
Pan Tao Ti Hsueh Pao | 2007年 / 6卷 / 829-832期
关键词：
High electron mobility transistors - Monolithic microwave integrated circuits - Semiconducting gallium arsenide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
A three-stage MMIC power amplifier operating from 6 to 18 GHz is fabricated using 0.25 μm AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT). The amplifier is fully monolithic, with all matching, biasing, and DC block circuitry included on the chip. The power amplifier has an average power gain of 19dB over 6-18 GHz. At operation frequencies from 6 to 18GHz, the output power is above 33.3 dBm, and the maximum output power of the MMIC is 34.7 dBm at 10 GHz. The input return loss is less than-10 dB and the output return is less than-6dB over operating frequency. This power amplifier has, to our knowledge, the best power gain flatness reported at C-X-Ku-band applications.
引用
收藏
相关论文
共 50 条
  • [21] A practical MMIC negative resistance structure for X and Ku band applications
    Moazzam, MR
    Darvishzadeh, M
    MONOLITHIC CIRCUITS SYMPOSIUM, DIGEST OF PAPERS, 1996, : 175 - 178
  • [22] A practical MMIC negative resistance structure for X and Ku band applications
    Moazzam, MR
    Darvishzadeh, M
    1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 157 - 160
  • [23] High efficiency X-Ku band MMIC power amplifiers
    Cardullo, M
    Page, C
    Teeter, D
    Platzker, A
    1996 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 1996, : 145 - 148
  • [24] High efficiency X-Ku band MMIC power amplifiers
    Cardullo, M
    Page, C
    Teeter, D
    Platzker, A
    MONOLITHIC CIRCUITS SYMPOSIUM, DIGEST OF PAPERS, 1996, : 163 - 166
  • [25] A broadband GaN-MMIC power amplifier for L to X bands
    Meliani, C.
    Behtash, R.
    Wuerfl, J.
    Heinrich, W.
    Traenkle, G.
    2007 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, VOLS 1 AND 2, 2007, : 260 - +
  • [26] HIGH-EFFICIENCY KU-BAND HBT MMIC POWER-AMPLIFIER
    BARTUSIAK, PJ
    HENDERSON, T
    KIM, T
    BAYRAKTAROGLU, B
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (11) : 584 - 586
  • [27] Balanced Microstrip AlGaN/GaN HEMT Power Amplifier MMIC for X-Band Applications
    Kuehn, J.
    van Raay, F.
    Quay, R.
    Kiefer, R.
    Bronner, W.
    Seelmann-Eggebert, M.
    Schlechtweg, M.
    Mikulla, M.
    Ambacher, O.
    Thumm, M.
    2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2008, : 95 - +
  • [28] A fully integrated Ku-band Doherty amplifier MMIC
    Campbell, CF
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1999, 9 (03): : 114 - 116
  • [29] GaN MMIC Broadband Doherty Power Amplifier
    Jee, Seunghoon
    Lee, Juyeon
    Park, Bonghyuk
    Kim, Cheol Ho
    Kim, Bumman
    2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013), 2013, : 603 - 605
  • [30] GaN MMIC Broadband Saturated Power Amplifier
    Lee, Juyeon
    Jee, Seunghoon
    Park, Bonghyuk
    Kim, Cheol Ho
    Kim, Bumman
    2013 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS (APMC 2013), 2013, : 606 - 608
12345