Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

被引：0

作者：

Roth, T. ^{[1
]}

Rosenits, P. ^{[1
]}

Diez, S. ^{[1
,4
]}

Glunz, S.W. ^{[1
]}

MacDonald, D. ^{[2
]}

Beljakowa, S. ^{[3
]}

Pensl, G. ^{[3
]}

机构：

[1] Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg, Germany

[2] Department of Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 0200, Australia

[3] Lehrstuhl für Angewandte Physik (LAP), University of Erlangen Nürnberg, 91058 Erlangen, Germany

[4] Q-Cells AG, Thalheim, Germany

来源：

Journal of Applied Physics | 2007年 / 102卷 / 10期

关键词：

Silicon wafers;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

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