Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

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作者：
Roth, T. [1 ]
Rosenits, P. [1 ]
Diez, S. [1 ,4 ]
Glunz, S.W. [1 ]
MacDonald, D. [2 ]
Beljakowa, S. [3 ]
Pensl, G. [3 ]
机构：
[1] Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg, Germany
[2] Department of Engineering, College of Engineering and Computer Science, Australian National University, Canberra, ACT 0200, Australia
[3] Lehrstuhl für Angewandte Physik (LAP), University of Erlangen Nürnberg, 91058 Erlangen, Germany
[4] Q-Cells AG, Thalheim, Germany
来源：
Journal of Applied Physics | 2007年 / 102卷 / 10期
关键词：
Silicon wafers;
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摘要：
Journal article (JA)
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