Stress analysis of ZnO film with a GaN buffer layer on sapphire substrate

被引：7

作者：

Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ^{[1
]}

不详 ^{[2
]}

机构：

[1] Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences

[2] Materials Science Center, Institute of Semiconductors, Chinese Academy of Sciences

来源：

Chin. Phys. Lett. | 2008年 / 6卷 / 2277-2280期

关键词：

20;

D O I：

10.1088/0256-307X/25/6/097

中图分类号：

学科分类号：

摘要：

A 5.35-μm-thick ZnO film is grown by chemical vapour deposition technique on a sapphire (0001) substrate with a GaN buffer layer. The surface of the ZnO film is smooth and shows many hexagonal features. The full width at half maximum of ZnO (0002) ω-rocking curve is 161 arcsec, corresponding to a high crystal quality of the ZnO film. From the result of x-ray diffraction θ-2θ scanning, the stress status in ZnO film is tensile, which is supported by Raman scattering measurement. The reason of the tensile stress in the ZnO film is analysed in detail. The lattice mismatch and thermal mismatch are excluded and the reason is attributed to the coalescence of grains or islands during the growth of the ZnO film. © 2008 Chinese Physical Society and IOP Publishing Ltd.

引用

页码：2277 / 2280

页数：3

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