Influence of buffer carbon doping on pulse and AC behavior of insulated-gate field-plated power AlGaN/GaN HEMTs

被引：91

作者：

机构：

[1] Dipartimento di Scienze e Metodidell'Ingegneria, En and Tech-University of Modena and Reggio Emilia

[2] Dipartimento di Ingegneria Dell'Informazione, University of Padova

[3] Infineon Technologies Austria AG

来源：

| 1600年 / Institute of Electrical and Electronics Engineers Inc., United States卷 / 35期

关键词：

carbon doping; Current collapse; GaN HEMTs; GaN HFETs; GaN MOSHEMTs;

D O I：

10.1109/LED.2014.2304680

中图分类号：

学科分类号：

摘要：

Pulse behavior of insulated-gate double-field-plate power AlGaN/GaN HEMTs with C-doped buffers showing small current-collapse effects and dynamic R DS,on increase can accurately be reproduced by numerical device simulations that assume the CN-CGa autocompensation model as carbon doping mechanism. Current-collapse effects much larger than experimentally observed are instead predicted by simulations if C doping is accounted by dominant acceptor states. This suggests that buffer growth conditions favoring CN-CGa autocompensation can allow for the fabrication of power AlGaN/GaN HEMTs with reduced current-collapse effects. The drain-source capacitance of these devices is found to be a sensitive function of the C doping model, suggesting that its monitoring can be adopted as a fast technique to assess buffer compensation properties. © 1980-2012 IEEE.

引用

页码：443 / 445

页数：2

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