Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method

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作者：
Lin, Yow-Jon [1 ]
Wu, Ping-Hsun [1 ]
Tsai, Chia-Lung [2 ]
Liu, Chia-Jyi [2 ]
Lin, Zhi-Ru [2 ]
Chang, Hsing-Cheng [3 ]
Lee, Ching-Ting [4 ]
机构：
[1] Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan
[2] Department of Physics, National Changhua University of Education, Changhua 500, Taiwan
[3] Department of Automatic Control Engineering, Feng Chia University, Taichung 407, Taiwan
[4] Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan
来源：
Journal of Applied Physics | 2008年 / 103卷 / 11期
关键词：
ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy; x-ray diffraction; photoluminescence; and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges; a decrease in the number of nonradiative recombination defects; and an increase in the nonradiative recombination lifetime. © 2008 American Institute of Physics;
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