Si-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors

被引：0
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作者：
Xia, Guangrui [1 ,3 ]
Hoyt, Judy L. [1 ]
Canonico, Michael [2 ]
机构：
[1] Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, United States
[2] Physical Analysis Laboratory Arizona (PALAZ), Freescale Semiconductor, Inc., Tempe, AZ 85284, United States
[3] IBM Semiconductor Research and Development Center (SRDC), Microelectronics Division, Hopewell Junction, NY 12533
来源：
Journal of Applied Physics | 2007年 / 101卷 / 04期
关键词：
MOSFET devices;
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