Si-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors

被引：0
|
作者：
Xia, Guangrui [1 ,3 ]
Hoyt, Judy L. [1 ]
Canonico, Michael [2 ]
机构：
[1] Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, United States
[2] Physical Analysis Laboratory Arizona (PALAZ), Freescale Semiconductor, Inc., Tempe, AZ 85284, United States
[3] IBM Semiconductor Research and Development Center (SRDC), Microelectronics Division, Hopewell Junction, NY 12533
来源：
Journal of Applied Physics | 2007年 / 101卷 / 04期
关键词：
MOSFET devices;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [21] EFFECTIVE MOBILITY IN P-CHANNEL SI-SIGE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS)
    MANKU, T
    NATHAN, A
    CANADIAN JOURNAL OF PHYSICS, 1992, 70 (10-11) : 959 - 962
  • [22] Comparative study of phonon-limited mobility of two-dimensional electrons in strained and unstrained Si metal-oxide-semiconductor field-effect transistors
    Takagi, SI
    Hoyt, JL
    Welser, JJ
    Gibbons, JF
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) : 1567 - 1577
  • [23] Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors
    Hoshii, Takuya
    Sugahara, Satoshi
    Takagi, Shin-ichi
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4B): : 2122 - 2126
  • [24] Impact of Ge Content on Flicker Noise Behavior of Strained-SiGe p-Type Metal-Oxide-Semiconductor Field-Effect Transistors
    Wu, San-Lein
    Wu, Chung Yi
    Lin, Hau-Yu
    Kuo, Cheng-Wen
    Chen, Shin-Hsin
    Lin, Chung Hsiung
    Chang, Shoou-Jinn
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [25] Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging
    Li, J
    Anjum, D
    Hull, R
    Xia, G
    Hoyt, JL
    APPLIED PHYSICS LETTERS, 2005, 87 (22) : 1 - 3
  • [26] Carrier mobility characteristics and negative bias temperature instability reliability in strained-Si p-type metal-oxide-semiconductor field-effect transistors
    Pan, Tung-Ming
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (12) : G351 - G353
  • [27] Strained Si n-channel metal-oxide-semiconductor field-effect transistors formed on very thin SiGe relaxed layer fabricated by ion implantation technique
    Sawano, K.
    Fukumoto, A.
    Hoshi, Y.
    Shiraki, Y.
    Yamanaka, J.
    Nakagawa, K.
    APPLIED PHYSICS LETTERS, 2007, 90 (20)
  • [28] Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors
    Yang, Y.-J.
    Ho, W. S.
    Huang, C.-F.
    Chang, S. T.
    Liu, C. W.
    APPLIED PHYSICS LETTERS, 2007, 91 (10)
  • [29] Nickel Schottky junction on epi-Ge for strained Ge metal-oxide-semiconductor field-effect transistors source/drain engineering
    Lee, M. H.
    Hsieh, B. -F.
    Chang, S. T.
    Lee, S. W.
    THIN SOLID FILMS, 2012, 520 (08) : 3379 - 3381
  • [30] Hole confinement and mobility in heterostructure Si/Ge/Si p-channel metal-oxide-semiconductor field effect transistors
    Cyca, BR
    Robins, KG
    Tarr, NG
    Xu, DX
    Noel, JP
    Landheer, D
    SimardNormandin, M
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (12) : 8079 - 8083
12345