Si-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors

被引：0

作者：

Xia, Guangrui ^{[1
,3
]}

Hoyt, Judy L. ^{[1
]}

Canonico, Michael ^{[2
]}

机构：

[1] Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, United States

[2] Physical Analysis Laboratory Arizona (PALAZ), Freescale Semiconductor, Inc., Tempe, AZ 85284, United States

[3] IBM Semiconductor Research and Development Center (SRDC), Microelectronics Division, Hopewell Junction, NY 12533

来源：

Journal of Applied Physics | 2007年 / 101卷 / 04期

关键词：

MOSFET devices;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用

共 50 条

[1] Si-Ge interdiffusion in strained Si/strained SiGe heterostructures and implications for enhanced mobility metal-oxide-semiconductor field-effect transistors
Xia, Guangrui Maggie
Hoyt, Judy L.
Canonico, Michael
JOURNAL OF APPLIED PHYSICS, 2007, 101 (04)
[2] Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors
Lee, ML
Fitzgerald, EA
Bulsara, MT
Currie, MT
Lochtefeld, A
JOURNAL OF APPLIED PHYSICS, 2005, 97 (01)
[3] Strained Si, SiGe, and Ge channels for high-mobility metal-oxide- semiconductor field-effect transistors
Lee, M.L. (mllee@alum.mit.edu), 1600, American Institute of Physics Inc. (97):
[4] Strained Si/strained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor field-effect transistors
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[5] Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors
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[6] Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal-oxide-semiconductor field-effect transistors
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[7] ELECTRON-MOBILITY ENHANCEMENT IN STRAINED-SI N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
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[8] Electron mobility enhancement in strained SiGe vertical n-type metal-oxide-semiconductor field-effect transistors
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[9] Physics of enhanced impact ionization in strained-Si p-channel metal-oxide-semiconductor field-effect transistors
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[10] Experimental Determination of Shear Stress induced Electron Mobility Enhancements in Si and Biaxially Strained-Si Metal-Oxide-Semiconductor Field-Effect Transistors
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