Microstructures and properties LiNbO3 films grown by pulsed laser deposition on GaN substrate

被引：0

作者：

Liao X. ^{[1
]}

Zhu J. ^{[1
]}

Luo W. ^{[1
]}

Hao L. ^{[1
]}

机构：

[1] University of Electronics Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices

来源：

Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology | 2010年 / 30卷 / 05期

关键词：

C-axis orientation; LiNbO[!sub]3[!/sub] thin film; Pulsed laser deposition; XRD;

D O I：

10.3969/j.issn.1672-7126.2010.05.09

中图分类号：

学科分类号：

摘要：

The LiNbO3 films were grown by pulsed laser deposition (PLD) on (0001) GaN substrate. The impacts of deposition conditions, such as the deposition rate, laser power, substrate temperature, and oxygen partial pressure, on its microstructures and its ferroelectric property were studied. The films were characterized with X-ray diffraction, scanning electron microscopy, and atomic force microscopy. The results show that the fairly dense and compact LiNbO3 films grown under optimized conditions, is c-axis oriented with two distinct epitaxial growth modes: [1-100](0001) LiNbO3//[11-20](0001)GaN and [10-10](0001) LiNbO3//[-12-10](0001)GaN. Possible mechanism responsible for the epitxial growth was also tentatively discussed.

引用

页码：496 / 499

页数：3

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