Growth and annealing of high mobility transparent conductive tungsten-doped indium oxide films

Transparent conductive, tungsten-doped indium oxide (IWO) films with the high carrier mobility were grown by magnetron sputtering on glass substrates, followed by in-situ annealing. The microstructures, optical and electrical properties of the IWO films were characterized with X-ray diffraction (XRD), atomic force microscopy (AFM), ultraviolet visible light (UV-Vis) spectro photometry and van der Pauw method. The influence of oxygen partial pressure and annealing on the electro-optical properties was investigated. It is found that the electro-optical properties of the films are sensitive to the oxygen partial pressure, and can be improved by the annealing treatment. The high quality IWO films, with the lowest resistivity of 2.2 × 10-4 Ω&middotcm, a carrier mobility of 63.5 cm2/V&middot and an average transmission higher than 83.2% in the visible light range, were obtained.