Impact of gate metal-induced stress on performance modulation in gate-last metal-oxide-semiconductor field-effect transistors

被引：0
|
作者：
Matsuki, Takeo [1 ]
Mise, Nobuyuki [1 ]
Inumiya, Seiji [1 ]
Eimori, Takahisa [1 ]
Nara, Yasuo [1 ]
机构：
[1] Semiconductor Leading Edge Technologies, Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 5 B期
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页码：3181 / 3184
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