Optically pumped spin-polarized carrier transport across Fe wire/GaAs interfaces

被引：0

作者：

Taniyama, T. ^{[1
]}

Wada, E. ^{[2
]}

Yamazaki, Y. ^{[2
]}

机构：

[1] Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

[2] Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

来源：

Journal of Applied Physics | 2006年 / 99卷 / 08期

关键词：

Spin-selective transport of optically pumped spin-polarized electrons across 5-nm-thick Fe wiresGaAs and 5-nm-thick Fe wiresAl Ox (1.5 nm) GaAs interfaces is studied as functions of magnetic field and temperature. We find characteristic temperature dependence of the spin selectivity at the FeAl Ox p-GaAs interface; where the selectivity shows a maximum at 200 K; which we attribute to the tunneling effect of spin-polarized electrons across the Al Ox layer in the FeAl Ox p-GaAs structure. © 2006 American Institute of Physics;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Journal article (JA)

引用