Nitrogen dioxide sensing properties and mechanism of copper phthalocyanine film

被引：16
|
作者：
School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China [1 ]
不详 [2 ]
不详 [3 ]
机构：
来源：
Chin. Phys. Lett. | 2008年 / 10卷 / 3590-3592期
关键词：
Field effect transistors - Metal working - Copper - Gas detectors - Nitrogen oxides;
D O I：
10.1088/0256-307X/25/10/019
中图分类号：
学科分类号：
摘要：
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