Kelvin probe force microscopy study on operating In-Sn-O-channel ferroelectric-gate thin-film transistors

被引：0

作者：

Tue, P.T. ^{[1
,2
]}

Miyasako, T. ^{[3
]}

Tokumitsu, E. ^{[1
,2
]}

Shimoda, T. ^{[1
,2
]}

机构：

[1] ERATO, Shimoda Nano-Liquid Process Project, Japan Science and Technology Agency, 2-13 Asahidai, Nomi, Ishikawa 923-1211, Japan

[2] Green Devices Research Center, Japan Advanced Institute of Science and Technology, 2-13 Asahidai, Nomi, Ishikawa 923-1211, Japan

[3] Yokkaichi Research Center, JSR Corporation, Yokkaichi 510-8552, Japan

来源：

Journal of Applied Physics | 2014年 / 115卷 / 10期

关键词：

Field effect transistors - Thin film transistors - Probes - Ferroelectricity - Indium compounds - Tin compounds;

D O I：

10.1063/1.4866597

中图分类号：

学科分类号：

摘要：

Surface potentials of an operating In-Sn-O channel ferroelectric-gate transistor (FGT) were mapped by Kelvin probe force microscopy. We clearly observed a gradual transition within the channel from linear potential profile to superlinear ones when drain voltage approaches and overcomes gate voltage, which is related to the physics of electronic transport under field-effect doping. The dependence of field-effect mobility on gate-bias and lateral field, as well as the effect of source/drain electrode materials on transport properties, was also elucidated. This study provides useful information for optimizing the FGT performance and for understanding its underlying physics. © 2014 AIP Publishing LLC.

引用

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