Synthesis and Characterization of Nanostructured Cerium-Doped Zinc Oxide Thin Films for Selective Nitrogen Dioxide Gas Sensing Applications

被引：0

作者：

Hiremath, Mahalingeshwar Vishwanath ^{[1
]}

Momin, Naeemakhtar ^{[2
]}

Manjanna, Jayappa ^{[3
]}

Hegde, Balachandra Gajanan ^{[1
]}

Byalollikar, Devidas Gaibanna ^{[4
]}

机构：

[1] Rani Channamma Univ, Dept Phys, Belagavi 591156, Karnataka, India

[2] Sangolli Rayanna First Grade Constituent Coll, Dept Chem, Belagavi 590017, Karnataka, India

[3] Rani Channamma Univ, Dept Chem, Belagavi 591156, Karnataka, India

[4] Kuvempu Univ, Dept Phys, Shimoga 577451, Karnataka, India

来源：

TRANSACTIONS OF THE INDIAN CERAMIC SOCIETY | 2024年 / 83卷 / 03期

关键词：

Semiconductor; Sensor; NO2; 5 mol% Ce-doped ZnO; Sensitivity; PHOTOLUMINESCENCE PROPERTIES; OPTICAL-PROPERTIES; ZNO NANORODS; CE; PERFORMANCE; SENSOR; NO2; NANOPARTICLES; SENSITIVITY;

D O I：

10.1080/0371750X.2024.2405913

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zinc oxide thin films doped with cerium were synthesized through facile spray pyrolysis technique and subsequently characterized via an array of analytical methods, including X-ray diffraction, ultraviolet-visible diffused reflectance absorption spectroscopy, photoluminescence, scanning electron microscopy and energy-dispersive X-ray spectroscopy techniques. The operative mechanism of the semiconductor metal oxide gas sensors is predicated on the modulation of electrical conductivity in response to varying gaseous atmospheres, under the influence of disparate thermal conditions. The nitrogen dioxide gas-sensing performance of the films demonstrated a noteworthy gas response of 18% at an elevated temperature of 400 degrees C for a concentration of 100 ppm, accompanied by rapid response and recovery times of 23 and 60 s, respectively.

引用

页码：199 / 210

页数：12

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