Realization of ultraviolet electroluminescence from ZnO homojunction fabricated on silicon substrate with p-type ZnO:N layer formed by radical N 2O doping

被引：11

作者：

School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024, China ^{[1
]}

机构：

[1] School of Physics and Optoelectronic Technology, Dalian University of Technology

来源：

Chin. Phys. Lett. | 2008年 / 12卷 / 4345-4347期

关键词：

Zinc oxide;

D O I：

10.1088/0256-307X/25/12/045

中图分类号：

学科分类号：

摘要：

ZnO homojunction light-emitting diodes are fabricated on Si(100) substrates by plasma assisted metal organic chemical vapour deposition. A p-type layer of nitrogen-doped ZnO film is formed using radical N2O as the acceptor precursor. The n-type ZnO layer is composed of un-doped ZnO film. The device exhibits desirable rectifying behaviour with a turn-on voltage of 3.3V and a reverse breakdown voltage higher than 6V. Distinct electroluminescence emissions centred at 395 nm and 490 nm are detected from this device at forward current higher than 20 mA at room temperature. © 2008 Chinese Physical Society and IOP Publishing Ltd.

引用

页码：4345 / 4347

页数：2

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